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Pb Free Product http://www.ncepower.com NCE7580D NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE7580D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. GENERAL FEATURES VDS = 75V,ID =80A RDS(ON) <8m @ VGS=10VTyp6.5m Special process technology for high ESD capability Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Marking and pin Assignment Schematic diagram Application Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply TO-263-2L top view Package Marking And Ordering Information Device Marking NCE7580D Device NCE7580D Device Package TO-263-2L Reel Size Tape width Quantity - Absolute Maximum Ratings (TA=25unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100) Pulsed Drain Current Maximum Power Dissipation Peak diode recovery voltage Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS Limit 75 25 80 78 320 30 170 1.13 580 -55 To 175 Unit V V A A A W V/ns W/ mJ ID ID (100) IDM PD dv/dt TJ,TSTG Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 Pb Free Product http://www.ncepower.com Thermal Characteristic Thermal Resistance,Junction-to- Case (Note 2) RJc NCE7580D 0.88 /W Electrical Characteristics (TA=25unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min 75 Typ Max Unit V BVDSS IDSS IGSS VGS(th) RDS(ON) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS trr Qrr ton VGS=0V ID=250A VDS=100V,VGS=0V VGS=25V,VDS=0V VDS=VGS,ID=250A VGS=10V, ID=30A VDS=5V,ID=30A 1 100 2 2.85 6.5 60 3050 280 130 15 4 8 A nA V m S PF PF PF nS nS nS nS nC nC nC VDS=50V,VGS=0V, F=1.0MHz VDD=30V,ID=2A,RL=15 VGS=10V,RG=2.5 90 40 95 56 12 16 1.2 80 50 48 VDS=24V,ID=40A, VGS=10V VGS=0V,IS=40A TJ = 25C, IF = 75A di/dt = 100A/s(Note3) V A nS nC Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 5. EAS conditionTj=25,VDD=50V,VG=10V,L=0.3mH,Rg=62 Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 Pb Free Product http://www.ncepower.com NCE7580D Test circuit 1EAS test Circuits 2Gate charge test Circuit: 3Switch Time Test Circuit Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 Pb Free Product http://www.ncepower.com NCE7580D TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves) Figure1. Safe operating area Figure2. Source-Drain Diode Forward Voltage Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance Figure6. RDS(ON) vs Junction Temperature Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.0 Pb Free Product http://www.ncepower.com Figure7. BVDSS vs Junction Temperature NCE7580D Figure8. VGS(th) vs Junction Temperature Figure9. Gate charge waveforms Figure10. Capacitance Figure11. Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 Pb Free Product http://www.ncepower.com NCE7580D TO-263-2L PACKAGE INFORMATION Symbol A A1 B b b1 c c1 D E e e1 L L1 L2 L3 V Dimensions In Millimeters Min 4.470 0.000 1.170 0.710 1.170 0.310 1.170 10.010 8.500 2.540TYP. 4.980 15.050 5.080 2.340 1.300 5.600 REF. 5.180 15.450 5.480 2.740 1.700 Max 4.670 0.150 1.370 0.910 1.370 0.530 1.370 10.310 8.900 Dimensions In Inches Min 0.176 0.000 0.046 0.028 0.046 0.012 0.046 0.394 0.335 0.100TYP. 0.196 0.593 0.200 0.092 0.051 0.220 REF. 0.204 0.608 0.216 0.108 0.067 Max 0.184 0.006 0.054 0.036 0.054 0.021 0.054 0.406 0.350 Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 Pb Free Product http://www.ncepower.com ATTENTION: NCE7580D Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 7 v1.0 |
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